UT6898 mosfet equivalent, n-channel enhancement power mosfet.
* RDS(ON) ≤ 14 mΩ @ VGS=4.5V, ID=9.4A * RDS(ON) ≤ 18 mΩ @ VGS=2.5V, ID=8.3A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified
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* FEATURES
* RDS(ON) ≤ 14 mΩ @ VGS=4.5V, ID=9.4A * RDS(ON) ≤ 18 mΩ @ VGS=2.5V, ID=8.3A * Low capacitance * Low gat.
The UT6898 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
* FEATURES
* RDS(ON) ≤ 14 mΩ @ VGS=4.5V, ID=9.
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